Apparatus and method for memory
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United States of America Patent
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Issued Date -
Mar 11, 2010
app pub date -
Sep 9, 2008
filing date -
Sep 9, 2008
priority date (Note) -
Abandoned
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Abstract
A programmable resistance memory includes a volume of programmable resistance material formed between and coupled to two electrodes. The volume of programmable resistance material includes a region of enhanced programmability that is positioned to maximize the effect of a programming current. The region of enhanced programmability is positioned at a distance from regions of high thermal conductivity, such as areas in close proximity to electrodes.
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