RADIATION DETECTION SYSTEM USING SOLID-STATE DETECTOR DEVICES
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United States of America Patent
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app pub date -
Sep 22, 2009
filing date -
Oct 26, 2001
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Abandoned
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Abstract
A neutron detection device (100) includes a semiconductor substrate including a gallium arsenide substrate region (102) having a back surface, and a high purity gallium arsenide active region (104) having a front surface. A back contact layer (118) is disposed on the back surface for providing a first voltage potential at the back surface. Elongated tube cavities extend from respective openings in the front surface into the active region (104) and almost through, but not totally through, the active region. A front contact layer is disposed on the front surface for providing a second voltage potential at the front surface. Neutron reactive material, e.g., pulverized Boron-10 powder, fills the elongated tube cavities to a high packing density. Optionally, spherical holes are formed into the substrate. The spherical holes are filled with neutron reactive material to enhance the efficiency of the neutron detection device.
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