MIIM DIODES
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United States of America Patent
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Issued Date -
Apr 1, 2010
app pub date -
Sep 29, 2008
filing date -
Sep 29, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises a first electrode comprising a first metal, a first region comprising a first insulating material, a second region comprising a second insulating material, and a second electrode comprising a second metal. The first region and the second region reside between the first electrode and the second electrode. The second insulating material is doped with nitrogen. Note that the second insulating material may have an interface with either the first electrode or the second electrode.
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