REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS
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United States of America Patent
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Issued Date -
Apr 22, 2010
app pub date -
Oct 16, 2009
filing date -
Oct 16, 2008
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Abandoned
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Abstract
The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enables obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device.
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