Method for modifying photomask layout
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United States of America Patent
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Nov 8, 2011
Grant Date -
Apr 22, 2010
app pub date -
Dec 24, 2008
filing date -
Oct 17, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for modifying a photomask layout includes the following steps. First, a photomask layout having at least an edge is provided. A plurality of evaluation points are positioned on the edge. Then, the photomask layout is interpreted to have an interpreted photomask layout and an interpreted edge pattern. The interpreted edge pattern is formed by interpreting the above-mentioned edge. After that, a shift between the edge and the interpreted edge and corresponding to each of the evaluation points is calculated. Afterwards, a shift gradient between two evaluation points can be derived from the shift. Finally, a number of segments between each two evaluation points can be estimated.
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