SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

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United States of America Patent

APP PUB NO 20100101486A1
SERIAL NO

12530914

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Abstract

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substrate is used as a substrate for epitaxial growth.

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Patent Owner(s)

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NIPPON MINING & METALS CO LTDMINATO-KU TOKYO 105-0001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morioka, Satoru Saitama, JP 13 55
Shimizu, Takayuki Sailama, JP 242 1857
Takakusaki, Misao Saitama, JP 5 12

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