CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Apr 29, 2010
app pub date -
Oct 22, 2009
filing date -
Oct 23, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of forming a reversible resistance-switching metal-insulator-metal (“MIM”) stack is provided, the method including forming a first conducting layer comprising a degenerately doped semiconductor material, and forming a carbon-based reversible resistance-switching material above the first conducting layer. Other aspects are also provided.
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