GaN-BASED COMPOUND SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Nov 2, 2009
filing date -
Apr 21, 2005
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Abstract
A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an Al.sub.xIn.sub.yGa.sub.1-x-yN substrate (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.x+y.ltoreq.1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0.degree. and less than 1.degree. with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.
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