Production of Single Crystal CVD Diamond at Rapid Growth Rate
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
Nov 24, 2009
filing date -
Nov 25, 2008
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Abstract
In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 μm/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen.
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