Method for forming a film on a substrate
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
Feb 27, 2008
filing date -
Feb 27, 2007
priority date (Note) -
Abandoned
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Abstract
A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.
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