TWO-LINE MIXING OF CHEMICAL AND ABRASIVE PARTICLES WITH ENDPOINT CONTROL FOR CHEMICAL MECHANICAL POLISHING
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
Nov 18, 2009
filing date -
Nov 26, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Embodiments described herein provide a method for polishing a substrate surface. The methods generally include storing processing components in multiple storage units during processing, and combining the processing components to create a slurry while flowing the processing components to a polishing pad. A substrate is polished using the slurry, and the thickness of a material layer disposed on the substrate is determined. The flow rate of one or more processing components is then adjusted to affect the rate of removal of the material layer disposed on the substrate.
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