SEMICONDUCTOR LIGHT EMITTING DIODE
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United States of America Patent
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Issued Date -
Jun 10, 2010
app pub date -
Dec 9, 2009
filing date -
Dec 9, 2008
priority date (Note) -
Abandoned
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Abstract
A semiconductor LED is disclosed. The semiconductor LED can include a light emitting structure, which can be composed of an N-type semiconductor layer, an active layer, and a P-type semiconductor layer stacked in said order; a transparent electrode, formed on an upper surface of the light emitting structure; and a P-type electrode, formed on an upper surface of the transparent electrode. An insulator for blocking electric currents can be formed within the light emitting structure, at a position corresponding with the position of the P-type electrode. Certain embodiments of the invention can be used to prevent the occurrences of light reflecting off the lower surface of the P-type electrode, and thereby improve light-emitting efficiency.
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