Integrated Shunt Protection Diodes For Thin-Film Photovoltaic Cells And Modules
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United States of America Patent
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Issued Date -
Jun 17, 2010
app pub date -
Dec 15, 2008
filing date -
Dec 15, 2008
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a photovoltaic cell with an integrated shunt protection diode. The photovoltaic cell and corresponding integrated shunt protection diode are created by first scribing a transparent conductive oxide layer on a substrate to define a plurality of transparent conductive oxide areas. Next, a semiconductor layer is deposited onto a surface of the transparent conductive oxide layer. This semiconductor layer is scribed to expose a portion of each of the transparent conductive oxide areas. A conductive layer is then deposited onto a surface of the semiconductor layer. Subsequently, the conductive layer is scribed into conductive areas.
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