ETCHING METHOD, ETCHING MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
Jun 24, 2010
app pub date -
Apr 30, 2007
filing date -
May 1, 2006
priority date (Note) -
Abandoned
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Abstract
An etching method forms a metal-fluoride layer at a temperature of 150° C. or higher at least as a part of an etching mask formed over a semiconductor layer; patterns the metal-fluoride layer; and etches the semiconductor layer using the patterned metal-fluoride layer as a mask. According to the etching method, an etching-resistant semiconductor layer such as a Group III-V nitride semiconductor can be easily etched by a relatively simpler process.
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