Read, verify word line reference voltage to track source level
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United States of America Patent
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Nov 8, 2011
Grant Date -
Jun 24, 2010
app pub date -
Mar 2, 2010
filing date -
Dec 20, 2007
priority date (Note) -
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Abstract
A non-volatile memory device has individual pages of memory cells to be sensed in parallel. The memory device includes a source level tracking circuit coupled to receive a predetermined word line voltage from a word line voltage supply and the voltage level at the aggregate source node of one or more pages and coupled to provide to word lines of the memory an output voltage during the sensing operation, where the source level tracking circuit includes an op amp whereby the output voltage is the word line voltage offset by an amount to track the voltage level at the aggregate node and compensate for source bias errors due to a finite resistance in the ground loop.
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