Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus
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United States of America Patent
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Oct 11, 2011
Grant Date -
Jun 24, 2010
app pub date -
Feb 19, 2010
filing date -
Apr 27, 2007
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Abstract
A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
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