Polishing composition for semiconductor wafer
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United States of America Patent
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Issued Date -
Jul 1, 2010
app pub date -
Dec 17, 2009
filing date -
Dec 25, 2008
priority date (Note) -
Abandoned
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Abstract
A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide.
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