Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
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United States of America Patent
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Jan 3, 2012
Grant Date -
Jul 8, 2010
app pub date -
Jan 7, 2009
filing date -
Jan 7, 2009
priority date (Note) -
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Abstract
A memory device includes a diode driver and a data storage element, such as an element comprising phase change memory material, and in which the diode driver comprises a silicide element on a silicon substrate with a single crystal silicon node on the silicide element. The silicide element separates the single crystal silicon node from the underlying silicon substrate, preventing the flow of carriers from the single crystal silicon node into the substrate, and is capable of acting as a conductive element for interconnecting devices on the device. The single crystal silicon node acts as one terminal of a diode, and a second semiconductor node is formed on top of it, acting as the other terminal of the diode.
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