Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
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United States of America Patent
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May 10, 2011
Grant Date -
Jul 8, 2010
app pub date -
Mar 16, 2010
filing date -
Aug 1, 2005
priority date (Note) -
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Abstract
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
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