Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

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United States of America Patent

PATENT NO 8895410
SERIAL NO

11991908

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Abstract

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A cause of deteriorating the hydrogen termination on the surface of a wafer is found to be water adsorbed on the surface. By exposing the wafer to an inert gas atmosphere containing an H2 gas so as to suppress the oxidation reaction due to the water, it is possible to improve the hydrogen termination on the wafer surface.

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Patent Owner(s)

  • OHMI, TADAHIRO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akahori, Hiroshi Miyagi, JP 69 1021
Ohmi, Tadahiro Miyagi, JP 798 13074
Teramoto, Akinobu Miyagi, JP 114 769

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