CMP Slurry Composition for Copper Damascene Process
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United States of America Patent
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Issued Date -
Jul 15, 2010
app pub date -
Jun 8, 2007
filing date -
Jun 8, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.
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