SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF
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United States of America Patent
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Issued Date -
Jul 22, 2010
app pub date -
Jan 19, 2009
filing date -
Jan 19, 2009
priority date (Note) -
Abandoned
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Abstract
A semiconductor device is provided. The semiconductor device comprises an epitaxial layer disposed on a semiconductor substrate, a plurality of electronic devices disposed on the epitaxial layer and a trench isolation structure disposed between the electric devices. The trench isolation structure comprises a trench in the epitaxial layer and the semiconductor substrate, an oxide liner on the sidewall and bottom of the trench, and a doped polysilicon layer filled in the trench. Moreover, a zero bias voltage can be applied to the doped polysilicon layer. The trench isolation structure can be used for isolating electronic devices having different operation voltages or high-voltage devices.
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