High Margin Multilevel Phase-Change Memory via Pulse Width Programming
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United States of America Patent
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Issued Date -
Jul 22, 2010
app pub date -
Jan 22, 2009
filing date -
Jan 22, 2009
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Abstract
An electronic device and method of programming for binary and multilevel memory operation. The active material of the device is a phase-change material. The method includes utilization of the pulse duration of electrical pulses as a programming variable to program a phase-change device to two or more memory states that differ in the relative proportion and/or spatial arrangement of crystalline and amorphous phase regions. Pulse width programming, in conjunction with a device electrical contact having a resistivity within a particular range, enables fine control over the crystalline-amorphous phase-change process by facilitating control over the spatial distribution of thermal energy produced by Joule heating. The degree of control over the phase-change process enables reliable multilevel memory operation by providing for reproducible programming of memory states that are well-resolved in both resistance and programming variable.
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