Thin-Film Bulk Acoustic Resonators Having Reduced Susceptibility to Process-Induced Material Thickness Variations
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United States of America Patent
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Issued Date -
Aug 5, 2010
app pub date -
Jan 30, 2009
filing date -
Jan 30, 2009
priority date (Note) -
Abandoned
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Abstract
Thin-film bulk acoustic resonators include a resonator body (e.g., silicon body), a bottom electrode on the resonator body and a piezoelectric layer on the bottom electrode. At least one top electrode is also provided on the piezoelectric layer. In order to inhibit process-induced variations in material layer thicknesses from significantly affecting a desired resonant frequency of the resonator, the top and bottom electrodes are fabricated to have a combined thickness that is proportional to a target thickness of the piezoelectric layer extending between the top and bottom electrodes.
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