Light emitting apparatus and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7939835
APP PUB NO 20100201662A1
SERIAL NO

12762469

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Murakami, Satoshi Kanagawa, JP 328 8048
Sakakura, Masayuki Kanagawa, JP 305 15175
Takayama, Toru Kanagawa, JP 530 27252
Yamazaki, Shunpei Tokyo, JP 7285 226692

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