METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS, AND ALSO SOLAR MODULE
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United States of America Patent
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Issued Date -
Aug 12, 2010
app pub date -
Sep 11, 2008
filing date -
Sep 11, 2007
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Abandoned
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Abstract
An accelerated and simple-to-realize fast method for thermally converting metallic precursor layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency are provided. The substrates previously prepared at least with a metallic precursor layer are heated in a furnace, which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to an end temperature between 400° C. and 600° C. and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.
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