POLISHING COMPOSITION
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United States of America Patent
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Issued Date -
Aug 19, 2010
app pub date -
Aug 25, 2008
filing date -
Aug 23, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An object of one embodiment of the present invention is to provide a polishing composition which suppresses generation of recessing and dishing and includes a higher polishing rate. The polishing composition of an embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (CU) film, and contains ammonia, hydrogen peroxide, an amino acid and an anionic surfactant, the remainder being water. By containing those, the polishing composition can suppress generation of recessing and dishing when particularly used in the second step polishing.
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