POLISHING COMPOSITION
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United States of America Patent
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Issued Date -
Aug 19, 2010
app pub date -
Aug 25, 2008
filing date -
Aug 24, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
At least one embodiment of the invention provides a polishing composition that can achieve high polishing rate and as well can improve flatness. The polishing composition of at least one embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (Cu) film, and contains a basic compound containing an ammonium group, alkyl naphthalene sulfonate and hydrogen peroxide, the remainder being water. The pH of the polishing composition is within a range of 8 to 12. By containing those, a polishing composition that can achieve high polishing rate and improve flatness can be realized.
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