Method and Apparatus for Measuring Process Parameters of a Plasma Etch Process
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United States of America Patent
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Issued Date -
Aug 26, 2010
app pub date -
Jan 31, 2008
filing date -
Feb 2, 2007
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Abandoned
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Abstract
Method and apparatus for measuring process parameters of a plasma etch process. A method for detecting at least one process parameter of a plasma etch process being performed on a semiconductor wafer. The method comprises the steps of detecting light being generated from the plasma during the etch process, filtering the detected light to extract modulated light; and processing the detected modulated light to determine at least one process parameter of the etch process.
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