Semiconductor device having saddle fin transistor and manufacturing method of the same

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United States of America Patent

PATENT NO 8350321
APP PUB NO 20100219467A1
SERIAL NO

12494241

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Abstract

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The present invention discloses a transistor having the saddle fin structure. The saddle fin transistor of the present invention has a structure in which a landing plug contact region, particularly, a landing plug contact region on an isolation layer is elevated such that the landing plug contact SAC (Self Aligned Contact) fail can be prevented.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Kyu tae Seoul, KR 32 387

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