PHOTOVOLTAIC CELL COMPRISING AN MIS-TYPE TUNNEL DIODE
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United States of America Patent
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Issued Date -
Sep 9, 2010
app pub date -
Mar 6, 2009
filing date -
Mar 6, 2009
priority date (Note) -
Abandoned
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Abstract
A photovoltaic cell comprising a thin semiconductor lamina is described; the lamina is formed by cleaving from a donor wafer while the wafer is bonded to a receiver element which provides mechanical support. Thus fabrication steps performed following cleaving are advantageously performed at temperatures that will not damage the receiver element. By fabricating a cell comprising an MIS-type tunnel diode, rather than a conventional p-n diode, a high-temperature doping step may be avoided.
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