Method and Apparatus for Over-voltage Protection With Breakdown-Voltage Tracking Sense Element
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United States of America Patent
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Issued Date -
Sep 16, 2010
app pub date -
Mar 12, 2009
filing date -
Mar 12, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A power integrated circuit with internal over-voltage protection includes a power transistor monolithically integrated with a sense element and a control circuit. The power transistor is connected to an output terminal that is connected (or is connectable) to an external load. The sense element is connected to the output terminal in parallel with the power transistor. The sense element is constructed to be similar to the power transistor except that the sense element has a lower breakdown voltage. When the voltage of the output terminal exceeds the breakdown voltage of the sense element a breakdown current flows from the gate of the sense element to the control circuit. Inside the control circuit, a comparator or other over-voltage protection circuit monitors this feedback and controls the power transistor accordingly to protect the power integrated circuit from damage.
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