STATIC MEMORY MEMORY POINT AND APPLICATION TO AN IMAGE SENSOR

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United States of America Patent

APP PUB NO 20100232214A1
SERIAL NO

12678116

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Abstract

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The invention relates to a memory point of SRAM (static memory) type memory. The memory point conventionally comprises two inverters mounted head-to-tail between two nodes, and at least one access transistor able to be made conductive during a writing phase and linked between a first node and a line of data to be written, characterized in that it comprises an isolating transistor inserted in series between the output of a first inverter and the first node, the isolating transistor being controlled by an insulation signal at the start of a writing phase. The current consumption is reduced when the state of the memory point has to be inverted.

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Patent Owner(s)

Patent OwnerAddress
E2V SEMICONDUCTORSFRENCH SHENGAIGELEIFU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Papaix, Caroline Quaix En Chartreuse, FR 6 42

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