STATIC MEMORY MEMORY POINT AND APPLICATION TO AN IMAGE SENSOR
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United States of America Patent
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Issued Date -
Sep 16, 2010
app pub date -
Sep 12, 2008
filing date -
Sep 14, 2007
priority date (Note) -
Abandoned
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Abstract
The invention relates to a memory point of SRAM (static memory) type memory. The memory point conventionally comprises two inverters mounted head-to-tail between two nodes, and at least one access transistor able to be made conductive during a writing phase and linked between a first node and a line of data to be written, characterized in that it comprises an isolating transistor inserted in series between the output of a first inverter and the first node, the isolating transistor being controlled by an insulation signal at the start of a writing phase. The current consumption is reduced when the state of the memory point has to be inverted.
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