Method of treating a semiconductor substrate

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United States of America Patent

PATENT NO 7985683
APP PUB NO 20100240219A1
SERIAL NO

12801178

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Abstract

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A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iimori, Hiroyasu Yokohama, JP 29 280
Ji, Linan Yokohama, JP 12 228
Koide, Tatsuhiko Yokohama, JP 42 327
Okuchi, Hisashi Yokohama, JP 63 571
Shimayama, Kentaro Yokohama, JP 5 105
Tomita, Hiroshi Yokohama, JP 319 4120

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