Method of treating a semiconductor substrate

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United States of America Patent

PATENT NO 7985683
APP PUB NO 20100240219A1
SERIAL NO

12801178

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Abstract

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A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iimori, Hiroyasu Yokohama, JP 29 256
Ji, Linan Yokohama, JP 12 208
Koide, Tatsuhiko Yokohama, JP 41 291
Okuchi, Hisashi Yokohama, JP 62 526
Shimayama, Kentaro Yokohama, JP 5 94
Tomita, Hiroshi Yokohama, JP 314 3958

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