Importance

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Abstract

A silicon manufacturing apparatus is disclosed as having a reactor tube (10) in which reaction occurs between zinc and silicon compound, zinc supply pipes (30, 30') having heating portions to heat zinc for generating zinc gas and zinc ejecting portions ejecting and supplying zinc gas to the reactor tube, a zinc feeding section (40A, 40B) feeding zinc into the zinc supply pipes, a silicon compound supply pipe (50, 50A, 50B, 50C, 50c, 54, 57, 90) having a silicon compound ejecting portion to eject and supply silicon compound gas to the reactor tube so as to allow silicon compound gas to flow from a lower side to an upper side in the reactor tube, and a heating furnace (20) disposed outside the reactor tube to define a heating region (a) accommodating therein a part of the reactor tube, the heating portion and the zinc ejecting section for heating the same so as to allow the reactor tube, through which zinc gas and silicon compound gas flow, to have the temperature distribution such that a temperature closer to a central axis (C) of the reactor tube is lower than that closer to a side circumferential wall of the reactor tube.

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First Claim