Diamond type quad-resistor cells of PRAM
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United States of America Patent
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Jun 5, 2012
Grant Date -
Oct 14, 2010
app pub date -
Apr 9, 2009
filing date -
Apr 9, 2009
priority date (Note) -
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Abstract
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) formed over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.
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