X-RAY GENERATOR EMPLOYING HEMIMORPHIC CRYSTAL
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United States of America Patent
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Issued Date -
Oct 14, 2010
app pub date -
Oct 22, 2008
filing date -
Oct 30, 2007
priority date (Note) -
Abandoned
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Abstract
An X-ray generator comprises a container (1) for maintaining a high vacuum or low pressure gas atmosphere internally, a hemimorphic crystal (4), temperature raising/lowering means (3, 5-7), and a metal target (8) for generating X-rays. In this X-ray generator the metal target (8) has a pointed protrusion protruding toward the hemimorphic crystal (4). When X-rays are generated by raising/lowering the temperature of the hemimorphic crystal (4) by using the temperature raising/lowering means (3, 5-7), the intensity of an electric field formed between the hemimorphic crystal (4) and the metal target (8) increases at the pointed end of the protrusion and thus the intensity of X-rays generated through collision of electrons against the metal target (8) increases. Consequently, an X-ray generator employing a hemimorphic crystal, which is capable of generating X-rays with practically sufficient intensity can be provided.
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