DOPING OF SEMICONDUCTOR LAYER FOR IMPROVED EFFICIENCY OF SEMICONDUCTOR STRUCTURES
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United States of America Patent
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Issued Date -
Nov 4, 2010
app pub date -
Apr 30, 2009
filing date -
Apr 30, 2009
priority date (Note) -
Abandoned
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Abstract
A system and method for variable doping within a semiconductor structure for improved efficiency is described. One embodiment includes a semiconductor structure comprising a first semiconductor layer comprising a first semiconductor material, and a second semiconductor layer comprising a second semiconductor material, wherein the second semiconductor material is an oppositely-typed semiconductor material from the first semiconductor material, and wherein the second semiconductor layer comprises a first region adjacent to the first semiconductor layer, wherein the first region comprises low-doped second semiconductor material, and a second region adjacent to the first region, wherein the second region comprises highly-doped second semiconductor material to increase a built-in potential of the semiconductor structure.
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