Programmable resistance memory and method of making same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20100283029A1
SERIAL NO

12454002

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Abstract

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A memory includes multiple layers of deposited memory material. An etch is performed on at least one layer of deposited memory material prior to the deposition of a subsequent layer of memory material.

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Patent Owner(s)

Patent OwnerAddress
OVONYX INC2956 WATERVIEW DRIVE ROCHESTER HILLS MI 48309

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Czubatyj, Wolodymyr Warren, US 67 5770
Dennison, Charles San Jose, US 43 2659
Fournier, Jeff Livonia, US 5 75
Latowski, Tom Macomb, US 1 9
Reed, James Auburn Hills, US 39 390
Sandoval, Regino Rochester Hills, US 11 231

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