METHODS AND APPARATUS FOR FORMING LINE AND PILLAR STRUCTURES FOR THREE DIMENSIONAL MEMORY ARRAYS USING A DOUBLE SUBTRACTIVE PROCESS AND IMPRINT LITHOGRAPHY
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Aug 13, 2010
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Dec 31, 2007
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Abstract
The present invention provides systems, apparatus, and methods for forming three dimensional memory arrays using a multi-depth imprint lithography mask and a double subtractive process. An imprint lithography mask for manufacturing a memory layer in a three dimensional memory is described. The mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a double subtractive process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to rails for forming memory lines and at least one depth corresponds to pillars for forming memory cells. Numerous other aspects are disclosed.
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