RE-ESTABLISHING A HYDROPHOBIC SURFACE OF SENSITIVE LOW-K DIELECTRICS IN MICROSTRUCTURE DEVICES
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United States of America Patent
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Issued Date -
Dec 2, 2010
app pub date -
May 24, 2010
filing date -
May 29, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Silicon oxide based low-k dielectric materials may be provided with a hydrophobic low-k surface area, even after exposure to a reactive process ambient, by performing a surface treatment on the basis of hexamethylcyclotrisilazane and/or octamethylcyclotetrasilazane. In addition to the surface treatment, a polymerization may be initiated on the basis of a hydrophobic surface nature of the silicon-based dielectric material, thereby increasing the chemical stability during the further processing.
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