Read disturb-free SMT reference cell scheme
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United States of America Patent
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Issued Date -
Dec 2, 2010
app pub date -
May 26, 2009
filing date -
May 26, 2009
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Abstract
We describe a reference cell structure for determining data storing cell resistances in an SMT (spin moment transfer) MTJ (magnetic tunneling junction) MRAM array by comparing data cell currents with those of the reference cell. Since the reference cell also utilizes spin moment transfer (SMT) magnetic tunneling junction (MTJ) cells, there would ordinarily be the danger that the act of reading the reference cell could change its magnetization orientations and be a source of error for subsequent comparisons. Therefore the present invention describes a new circuit arrangement for the reference cell that directs read currents through two SMT MTJ cells in opposite directions so that the transfer of spin moments cannot affect the relative magnetization directions of the cells.
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