Dual-Output Triple-Vdd Charge Pump

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United States of America Patent

APP PUB NO 20100308899A1
SERIAL NO

12478674

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Abstract

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A dual-output triple-Vdd charge pump as two pumped outputs that are both pumped to three times the power-supply voltage, 3×Vdd. This pumped output voltage is reduced by two p-channel inner diode drops, to 3×Vdd−2×|Vtp|. A pair of cross-coupled n-channel transistors alternately charge two inner nodes from the power supply. Inner pumping capacitors drive inner nodes between Vdd and 2×Vdd, and the cross-coupling of the gates turns off one of the cross-coupled n-channel transistors when its inner node is being driven high. A p-channel inner diode transistor connects an inner node to an outer node, causing a |Vtp| drop. The outer node is also pumped by an outer pumping capacitor that drives the outer node between 2×Vdd−|Vtp| and 3×Vdd−|Vtp|. A p-channel outer diode transistor conducts from the outer node to the pumped output node, causing another |Vtp| voltage drop. The pumped output voltage is maintained at 3×Vdd−2×|Vtp| by an output capacitor.

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Patent Owner(s)

Patent OwnerAddress
PERICOM SEMICONDUCTOR CORP2380 BERING DRIVE SAN JOSE CA 95131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wong, Anthony Yap Cupertino, US 15 215

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