Method for Creating Trench in U Shape in Brittle Material Substrate, Method for Removing Process, Method for Hollowing Process and Chamfering Method Using Same

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United States of America Patent

SERIAL NO

12526330

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Abstract

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A method for creating a trench in U shape according to which trenches in lines which are continuous or broken or curved in a plane can be easily created on the surface of a substrate, as well as a chamfering method using this, are provided.A trench in U shape is created by peeling part of a brittle material substrate from the surface of the substrate by rapidly heating the substrate with conditions for irradiation with a laser for creating a trench in U shape which include the laser power as found in advance, the area to be irradiated with a laser, and the scanning speed, in accordance with the substrate material, which is the object to be processed, and the width, depth and form of the trench in U shape to be created. A chamfered surface is made of a trench surface which is part of a trench in U shape created between an end surface and a surface of the substrate, which are separated along a line along which the substrate is to be divided, between a start end and a finish end of said line along which the substrate is to be divided at the bottom of the created trench in U shape in accordance with a method for scribing a substrate by expanding a crack with a laser, a scribing method using a cutter wheel or the like.

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Patent Owner(s)

Patent OwnerAddress
MITSUBOSHI DIAMOND INDUSTRIAL CO LTD32-12 KOROEN SETTSU-CITY OSAKA 5660034 ?5660034

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuhara, Kenji Osaka, JP 5 86
Morita, Hideki Osaka, JP 137 583
Shimizu, Seiji Osaka, JP 72 772

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