Insulated Gate Bipolar Transistor (IGBT) Collector Formed with Ge/A1 and Production Method
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United States of America Patent
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Issued Date -
Dec 30, 2010
app pub date -
Jun 28, 2009
filing date -
Jun 28, 2009
priority date (Note) -
Abandoned
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Abstract
This invention discloses an IGBT device with its collector formed with Ge/Al and associated method of fabrication. The collector is formed on the substrate layer, which is on the back of IGBT, and contains Ge and Al thin films. After thinning and etching the back side of IGBT substrate, Ge and Al are sequentially deposited to form Ge/Al thin films on the back surface of the substrate. An annealing process is then carried out to diffuse Al into Ge thin film layer to form a P-doped Ge layer functioning as the IGBT collector. The present invention is applicable to both non punch through IGBTs as well as punch through IGBTs.
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