THIN FILM TRANSISTOR HAVING LONG LIGHTLY DOPED DRAIN ON SOI SUBSTRATE AND PROCESS FOR MAKING SAME
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United States of America Patent
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Issued Date -
Dec 30, 2010
app pub date -
Jan 27, 2009
filing date -
Jan 31, 2008
priority date (Note) -
Abandoned
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Abstract
Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications.
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