Methods and apparatus for reducing defect bits in phase change memory

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United States of America Patent

PATENT NO 8238149
APP PUB NO 20100328995A1
SERIAL NO

12715802

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Abstract

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Phase change memory devices and methods for operating described herein are based on the discovery that, following an initial high current operation applied to a phase change memory cell to establish the high resistance reset state, the current-voltage (I-V) behavior of the memory cell under different bias voltages can be used to detect if the memory cell is a defect cell having poor data retention characteristics.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION;MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Breitwisch, Matthew J Yorktown Heights, US 104 2535
Cheek, Roger Somers, US 3 38
Lam, Chung Hon Peekskill, US 115 3671
Lee, Ming-Hsiu Hsinchu, TW 127 911
Lung, Hsiang-Lan Dobbs Ferry, US 305 9494
Rajendran, Bipin New York, US 69 1740
Shih, Yen-Hao Elmsford, US 101 2312
Wu, Chao-I Zhubei, TW 161 1088

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