PHOTOELECTRIC CONVERSION ELEMENT STRUCTURE AND SOLAR CELL
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United States of America Patent
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Issued Date -
Jan 6, 2011
app pub date -
Mar 2, 2009
filing date -
Mar 7, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor.
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