Semiconductor material, method of making the same, and semiconductor device

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United States of America Patent

PATENT NO 8344356
APP PUB NO 20110001127A1
SERIAL NO

12735259

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Abstract

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A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of AlXGa1-XN graded such that a content ratio of Al in the composition decreases continuously or discontinuously in a crystal growing direction; a superlattice composite layer, formed on the composition graded layer, comprising a high Al-containing layer comprising a composition of AlYGa1-YN and a low Al-containing layer comprising a composition of AlZGa1-ZN that are laminated alternately; and a nitride semiconductor layer formed on the superlattice composite layer.

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Patent Owner(s)

  • DOWA ELECTRONICS MATERIALS CO., LTD.;NATIONAL UNIVERSITY CORPORATION NAGOYA INSTITUTE OF TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Egawa, Takashi Nagoya, JP 12 280
Ito, Tsuneo Akita, JP 18 244
Sakamoto, Ryo Akita, JP 44 146
Shimizu, Jo Akita, JP 7 120

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